Search results for "conductive Atomic Force Microscopy"
showing 10 items of 33 documents
Investigation of TiO<sub>2</sub> Ceramic Surface Conductivity Using Conductive Atomic Force Microscopy
2012
Dense TiO2 (rutile) ceramic samples were prepared by sintering compacts of titanium dioxide anatase powder at 1500 °C for 5h. Sintered samples were polished and annealed in vacuum at 1000 °C for 1h. Structural properties of the samples were studied by X-ray diffraction, polarized light and scanning electron microscopy. The surface topography and local electrical conductivity of the samples were investigated by atomic force microscopy technique under atmospheric conditions. Enhanced electrical conductivity was observed at grain boundaries while the polished, vacuum annealed grains surface showed non-homogeneous conductivity.
Electric and elastic properties of conductive polymeric nanocomposites on macro- and nanoscales
2002
Abstract In the past several years, the macroscopic electric and elastic properties of conductive polymeric composites have been studied from the viewpoint of such applications as thermistors and pressure sensors. In particular, we studied carbon black (CB) polymeric nanocomposites on macro- and nanoscales, using polyisoprene as the composite matrix. The filler component was an extra conductive carbon black (PRINTEX XE2, DEGUSSA) with a primary particle diameter of about 30 nm. A very strong reversible tensoresistive effect of electric resistance dependence on uniaxial tension deformation was observed in composites with the 10 carbon black mass parts added to 100 mass parts of polyisoprene.…
Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate
2021
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L) $MoS_2$ membrane exfoliated on gold. Differently than in the case of 1L $MoS_2$ supported by a common insulating substrate ($Al_2O_3/Si$), a better nucleation process of the high-k film was observed on the 1L $MoS_2/Au$ system since the ALD early stages. Atomic force microscopy analyses showed a $\approx 50\%$ $Al_2O_3$ surface coverage just after 10 ALD cycles, its increasing up to $>90\%$ (after 40 cycles), and an uniform $\approx$ 3.6 nm film, after 80 cycle…
Strain, doping and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate
2021
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand, it may affect significantly the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area 1L $MoS_{2}$ exfoliated on ultra-flat $Au$ films ($0.16-0.21 nm$ roughness) and finally transferre…
Towards the origin of the shear force in near-field microscopy
2001
The shear force from a gold or a graphite sample acting on an approaching near-field optical probe is studied in detail. The adiabatic and dissipative contributions to the force are clearly distinguished by monitoring the amplitude as well as the phase of the tip vibration when the tip approaches the surfaces. We also take into account that not only the damping and the resonance frequency but also the mass of the system changes when the tip approaches the surface. The relative strength of the contributions to the force varies differently but characteristically with the distance of the two samples, starting at a much larger distance in the case of graphite. The adiabatic contribution is lar…
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
2016
Contacts with MoS2 are currently the object of many investigations, since current injection through metal/MoS2 interfaces represents one of the limiting factors to the performance of MoS2 thin film transistors. In this paper, we employed conductive atomic force microscopy (CAFM) to investigate the current injection mechanisms from a nanometric contact (a Pt coated tip) to the surface of MoS2 thin films exfoliated on SiO2. The analysis of local current-voltage (I-V) characteristics on a large array of tip positions provided high spatial resolution information on the lateral homogeneity of the tip/MoS2 Schottky barrier Phi(B) and of the ideality factor n. From the histograms of the measured P…
Force interactions and adhesion of gold contacts using a combined atomic force microscope and transmission electron microscope
2002
Force interactions and adhesion of gold contacts using a combined atomic force microscope and transmission electron microscope
Correlative atomic force and confocal fluorescence microscopy: single molecule imaging and force induced spectral shifts (Conference Presentation)
2016
A grand challenge in nanoscience is to correlate structure or morphology of individual nano-sized objects with their photo-physical properties. An early example have been measurements of the emission spectra and polarization of single semiconductor quantum dots as well as their crystallographic structure by a combination of confocal fluorescence microscopy and transmission electron microscopy.[1] Recently, the simultaneous use of confocal fluorescence and atomic force microscopy (AFM) has allowed for correlating the morphology/conformation of individual nanoparticle oligomers or molecules with their photo-physics.[2, 3] In particular, we have employed the tip of an AFM cantilever to apply c…
Micro-Raman characterization of graphene grown on SiC(000-1)
2014
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.