Search results for "conductive Atomic Force Microscopy"
showing 10 items of 33 documents
Micro-Raman characterization of graphene grown on SiC(000-1)
2014
Graphene (Gr) was grown on the C face of 4H-SiC under optimized conditions (high annealing temperatures ranging from 1850 to 1950°C in Ar ambient at 900 mbar) in order to achieve few layers of Gr coverage. Several microscopy techniques, including optical microscopy (OM), ?Raman spectroscopy, atomic force microscopy (AFM) and atomic resolution scanning transmission electron microscopy (STEM) have been used to extensively characterize the lateral uniformity of the as-grown layers at different temperatures. ?Raman analysis provided information on the variation of the number of layers, of the stacking-type, doping and strain.
Atomic-resolution imaging of clean and hydrogen-terminated C(100)-(2×1)diamond surfaces using noncontact AFM
2010
Received 22 April 2010; published 14 May 2010High-purity, type IIa diamond is investigated by noncontact atomic force microscopy NC-AFM .Wepresent atomic-resolution images of both the electrically conducting hydrogen-terminated C 100 - 2 1 :Hsurface and the insulating C 100 - 2 1 surface. For the hydrogen-terminated surface, a nearly square unitcell is imaged. In contrast to previous scanning tunneling microscopy experiments, NC-AFM imaging allowsboth hydrogen atoms within the unit cell to be resolved individually, indicating a symmetric dimer alignment.Upon removing the surface hydrogen, the diamond sample becomes insulating. We present atomic-resolutionimages, revealing individual C-C dim…
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
2020
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350{\deg}C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sec…
Environmental chamber for an atomic force microscope.
2007
A commercial atomic force microscope (AFM), originally designed for operation in ambient conditions, was placed inside a compact aluminum chamber, which can be pumped down to high vacuum levels or filled with a desired gaseous atmosphere, including humidity, up to normal pressure. The design of this environmental AFM is such that minimal intrusion is made to the original setup, which can be restored easily. The performance inside the environmental chamber is similar to the original version.
Three-dimensional atomic force microscopy mapping at the solid-liquid interface with fast and flexible data acquisition
2016
We present the implementation of a three-dimensional mapping routine for probing solid-liquid interfaces using frequency modulation atomic force microscopy. Our implementation enables fast and flexible data acquisition of up to 20 channels simultaneously. The acquired data can be directly synchronized with commercial atomic force microscope controllers, making our routine easily extendable for related techniques that require additional data channels, e.g., Kelvin probe force microscopy. Moreover, the closest approach of the tip to the sample is limited by a user-defined threshold, providing the possibility to prevent potential damage to the tip. The performance of our setup is demonstrated …
Nanogoniometry with scanning force microscopy: a model study of CdTe thin films.
2007
In this paper scanning force microscopy is combined with simple but powerful data processing to determine quantitatively, on a sub-micrometer scale, the orientation of surface facets present on crystalline materials. A high-quality scanning force topography image is used to determine an angular histogram of the surface normal at each image point. In addition to the known method for the assignment of Miller indices to the facets appearing on the surface, a quantitative analysis is presented that allows the characterization of the relative population and morphological quality of each of these facets. Two different CdTe thin films are used as model systems to probe the capabilities of this met…
First images obtained in the near infrared spectrum with the photon scanning tunneling microscope
1993
Abstract First images obtained in the near infrared spectrum with a photon scanning tunneling microscope are presented. The intensity of the light collected by the fibertip, at λ = 1.3 λm , which is a function of the separation between the tip and the sample surface is in agreement with that predicted by the theory. Images of quartz and silicon oxide are presented and the latter is compared with that obtained by an atomic force microscope.
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures
2019
This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °
Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate
2021
In this paper we demonstrated the thermal Atomic Layer Deposition (ALD) growth at 250 {\deg}C of highly homogeneous and ultra-thin ($\approx$ 3.6 nm) $Al_2O_3$ films with excellent insulating properties directly onto a monolayer (1L) $MoS_2$ membrane exfoliated on gold. Differently than in the case of 1L $MoS_2$ supported by a common insulating substrate ($Al_2O_3/Si$), a better nucleation process of the high-k film was observed on the 1L $MoS_2/Au$ system since the ALD early stages. Atomic force microscopy analyses showed a $\approx 50\%$ $Al_2O_3$ surface coverage just after 10 ALD cycles, its increasing up to $>90\%$ (after 40 cycles), and an uniform $\approx$ 3.6 nm film, after 80 cycle…
Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy
2016
Contacts with MoS2 are currently the object of many investigations, since current injection through metal/MoS2 interfaces represents one of the limiting factors to the performance of MoS2 thin film transistors. In this paper, we employed conductive atomic force microscopy (CAFM) to investigate the current injection mechanisms from a nanometric contact (a Pt coated tip) to the surface of MoS2 thin films exfoliated on SiO2. The analysis of local current-voltage (I-V) characteristics on a large array of tip positions provided high spatial resolution information on the lateral homogeneity of the tip/MoS2 Schottky barrier Phi(B) and of the ideality factor n. From the histograms of the measured P…